Effects of pattern dimensions on stabilization of crystal orientation for (111) ge-on-insulator in rapid melting growth
(111)-oriented Ge-on-insulator (GOI) is the key material structure for next generation multifunctional large scale integrated circuits. The (111) GOI structure can be implemented for high-speed transistor channels, as well as templates for the integration of optoelectronic and spintronic materials o...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
2013
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| Subjects: | |
| Online Access: | http://eprints.utm.my/47855/ http://eprints.utm.my/47855/ |
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