ZrO2 thin films on Si substrate
In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptabl...
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| Pengarang-pengarang Utama: | , |
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| Format: | Artikel |
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Kluwer (now part of Springer)
2010
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://link.springer.com/article/10.1007%2Fs10854-010-0144-5 http://link.springer.com/article/10.1007%2Fs10854-010-0144-5 |
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