Effects of thermal annealing on the properties of highly reflective Nc-Si: H/A-Cnx: H multilayer films prepared by rf PECVD technique
The effects of thermal annealing in the range of 100-700°C on highly reflecting multilayer thin film consisting of 7 periods of alternating nc-Si:H/a-CNx:H layers prepared by radio-frequency plasma enhanced chemical vapour (r.f. PECVD) deposition technique were investigated. The films were deposite...
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| Pengarang-pengarang Utama: | , , , , , |
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| Format: | Artikel |
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2011
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.um.edu.my/7357/ http://eprints.um.edu.my/7357/1/Effects_Of_Thermal_Annealing_On_The_Properties_Of_Highly_Reflective_Nc%2DSi_HA%2DCnx_H_Multilayer_Films_Prepared_By_rf_PECVD_Technique.pdf |
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