Investigation of threshold voltage and transconductance variations in PMOS
Scaling process of MOSFET has yielded great benefit in term of processor technology evolution. However, it is worth to note that the scaling process also affects the electrical parameters as well. It is expected that as MOSFET gradually scaled into the submicron regime, the variation of electrical p...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/7185/ http://eprints.uthm.edu.my/7185/1/IC3E_2015_submission_107.pdf |
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| Summary: | Scaling process of MOSFET has yielded great benefit in term of processor technology evolution. However, it is worth to note
that the scaling process also affects the electrical parameters as well. It is expected that as MOSFET gradually scaled into the
submicron regime, the variation of electrical parameters due to scaling becomes more apparent. The study is carried out
through simulation work of 45 nm p-type MOSFET (PMOS) using a commercial device simulator. This tool is used as a
medium to observe changes in threshold voltage (VTH) and transconductance (gm). Changes of both parameters are
investigated against three factors; oxide thickness (tox), doping concentration of dopant in substrate and doping energy.
Observation in simulation results suggest that increment in both tox and doping energy increases VTH and reduces gm. In
contrast, increment in doping concentration of dopant improves gm and trims VTH. Analysis of results deduces that the
variations of both VTH and gm against those three factors are related to number of free carriers during device operation. |
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