Effects of pattern dimensions on stabilization of crystal orientation for (111) geoninsulator in rapid melting growth
(111)-oriented Ge-on-insulator (GOI) is the key material structure for next generation multifunctional large scale integrated circuits. The (111) GOI structure can be implemented for high-speed transistor channels, as well as templates for the integration of optoelectronic and spintronic materials...
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2013
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| நிகழà¯à®¨à®¿à®²à¯ˆ அணà¯à®•à®²à¯: | http://eprints.utm.my/40505/ http://eprints.utm.my/40505/ |
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