The effects of annealing temperatures on composition and strain in SixGe(1-x) obtained by melting growth of electrodeposited Ge on Si (100)
The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 degrees C for 1 s. All annealed samples sho...
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| Pengarang-pengarang Utama: | , , , , , , , , , , |
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| Format: | Artikel |
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MDPI AG
2014
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.utm.my/62904/ http://eprints.utm.my/62904/ http://eprints.utm.my/62904/ |
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