Gate length effect on nmos electrical characteristics using tcad tools.
The concept of device scaling in silicon transistor has consistently resulted in better device density and performance. In conventional MOSFETs, control of Ioff for scaled devices requires very thin gate dielectrics and high doping concentrations. The industry roadmap for CMOS technology predicts ph...
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| Main Authors: | , |
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| 格式: | Conference or Workshop Item |
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2008
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| 主题: | |
| 在线阅读: | http://eprints.uthm.edu.my/2293/ http://eprints.uthm.edu.my/2293/1/Gate_length_effect_on.pdf |
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| 总结: | The concept of device scaling in silicon transistor has consistently resulted in better device density and performance. In conventional MOSFETs, control of Ioff for scaled devices requires very thin gate dielectrics and high doping concentrations. The industry roadmap for CMOS technology predicts physical limitations as well as practical technological will become barriers to continuous scaling. As the downscale of CMOS technology approaches physical limitations, the need arises for alternative device structures. NMOS traditionally has been the dominant MOS technology. Relative to CMOS, NMOS shows higher speed, higher-power technology with lower cost and higher functional density. |
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