Process and device simulation of 80nm CMOS inverter using Sentaurus Synopsys TCAD
Nowadays, the simple manufacturing process of CMOS transistor is widely used in digital design implementation. Using the latest technology in fabrication, the sizes of semiconductor devices are ever shrinking toward the nanotechnology. This paper presents the development of 80nm gate length of CMOS...
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| Pengarang-pengarang Utama: | , , , , , |
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| Format: | Conference or Workshop Item |
| Diterbitkan: |
2008
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| Subjek-subjek: | |
| Capaian Atas Talian: | http://eprints.uthm.edu.my/79/ http://eprints.uthm.edu.my/79/1/muhammad_suhaimi_sulong.pdf |
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